HOME > Conferences > WCPEC

WCPEC-6 (30th EUPVSEC/41st IEEE PVSC/PVSEC-24)

2014/11/23-27 Kyoto, Japan

プロシーディング
ページ番号
発表題目、発表者・共同研究者、所属
J1MoO.2.3

Carrier Transport Characteristics of CrystallineSilicon Solar Cells with Widegap Heterojunction Emitter
T. Ogusu1), M. Konagai1,2) and S. Miyajima1)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)Photovoltaic Research Center(PVSEC), Tokyo Institute of Technology, Japan

1MoO.6.2

The Photovoltaic Properties of Aggregate Axial-Junction Silicon Nanowire Solar Cells
D. Kanematsu1,2), S. Yata1), A. Terakawa1), M. Tanaka1)and M. Konagai2)
1)Panasonic Corporation, Japan, 2)Tokyo Institute of Technology, Japan

2WeO.14.3 Efficient Amorphous Silicon Solar Cellson Imprinted SiOx Periodic Arrays of 3D Microstructure
C. Niikura1,3) and M. Konagai2,3)
1)Photovoltaic Materials Unit, National Institute forMaterials Sciences, Japan, 2)Department of PhysicalElectronics, Tokyo Institute of Technology, Japan,3)MEXT/FUTURE-PV Innovation Research, JST, Japan
2WeO.14.4 Novel Textured TCO Substrates and TheirApplications to the Solar Cells
P. Sichanugrist1), Y. Abe1), M. Konagai1,2), H. Konishi3), Y.Tsuda3), T. Shinagawa3), H. Tokioka3) and H. Fuchigami3)
1)Department of Physical Electronics, 2)PhotovoltaicsResearch Center (PVREC), Tokyo Institute of Technology, Japan, 3)Advanced Technology R&DCenter, Mitsubishi Electric Corporation, Japan
 2WeO.14.5 Amorphous SiOx:H as Antireflection Layer forGlass/ZnO Interface of Thin Film A-Si:H Solar Cell
Amartya Chowdhury1), Porponth Sichanugrist1) and Makoto Konagai1, 2)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)Photovoltaic Research Center(PVREC), Tokyo Institute of Technology, Japan
2ThPl.1 [Plenary] Next Generation Thin Film Silicon SolarCells
Makoto Konagai
Tokyo Institute of Technology
3ThO.5.4 Flexible CIGS Solar Cells Fabricated Using aPolyimide-coated Soda-lime Glass Substrate
A. Sadono1), M. Hino3), M. Ichikawa3), K. Yamamoto3), Y.Kurokawa1), M. Konagai1,2) and A. Yamada1,2)
1)Department of Physical Electronics, Tokyo Institute ofTechnology, Japan, 2)Photovoltaics Research Center(PVREC), Tokyo Institute of Technology, Japan,3)Kaneka Corporation, Japan
2TuPo.3.14 Low Temperature Processed a-SiO:H/a-Si:HTandem Cells for Full Spectrum Solar Cells
D. W. Kang1), P. Sichanugrist1) and M. Konagai1,2)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)Photovoltaic Research Center(PVREC), Tokyo Institute of Technology, Japan
2TuPo.3.22 Electrical Characterization of Hydrogenated Amorphous Silicon Oxide Films
T. Itoh1), R. Katayama1), K. Yamakawa1), K. Matsui1), M.Saito2), S. Sugiyama2), P. Sichanugrist3), S. Nonomura1)and M. Konagai3)
1)Gifu University, Japan, 2)Sharp Corporation, Japan,3)Tokyo Institute of Technology, Japan
2TuPo.3.24 Graphene Transparent Electrode with Low Contact Barrier in Silicon Thin-Film Solar Cells
R. Ishikawa1), Y. Kurokawa2), S. Miyajima2) and M.Konagai2)
1)Faculty of Engineering, Niigata University, Japan,2)Department of Physical Electronics, Tokyo Institute ofTechnology, Japan
2TuPo.4.2 Effect of Al Addition on the Electrical, Optical andStructural Properties of Sol-gel Derived Zn1-xMgxOThin Film
L. Meng, S. Miyajima and M. Konagai
Department of Physical Electronics, Graduate Schoolof Science and Engineering, Tokyo Institute ofTechnology, Japan
2TuPo.4.19 Development of High-quality a-SiO:H FilmUsing Triode Type PECVD and Low TemperatureDeposition
Riku Yamamoto1), Porponth Sichanugrist1) and MakotoKonagai1,2)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)Photovoltaic Research Center(PVREC), Tokyo Institute of Technology, Japan
2TuPo.4.24 Optical Simulations of Selective Nanostructuredsubstratesfor Silicon Thin Film Solar Cells
B. Janthong1), S. Kato1) and M. Konagai1,2)
1)MEXT/FUTURE-PV Innovation Research, JST, Japan,2)Department of Physical Electronics, Tokyo Institute ofTechnology, Japan
2TuPo.4.37 Development of Large-size Double-textured ZnO:BSubstrates and Their Applications to the SolarCells
Y. Abe1), P. Sichanugrist1), C. R. Wronski3) and M.Konagai1,2)
1)Department of Physical Electronics, 2)PhotovoltaicsResearch Center (PVREC), Japan, 3)The PennsylvaniaState University, USA
4TuPo.7.4 Realization of Excellent Passivation with WideBandgap a-SiOx:H Thin Film for the Application toSilicon Heterojunction Solar Cells
He Zhang1), Kazuyoshi Nakada2), Shinsuke Miyajima2) and Makoto Konagai1,2)
1)MEXT/FUTURE-PV Innovation Research, JST, Japan,2)Department of Physical Electronics, Tokyo Institute of Technology, Japan
4TuPo.7.21 Characterization of Laser Transferred Contactthrough Aluminum Oxide Passivation Layer
Shunsuke Urabe1), Junpei Irikawa1), Makoto Konagai1,2)and Shinsuke Miyajima1)
1)Graduation School of Science and Engineering,Japan, 2)PVREC, Japan
4TuPo.7.44 Antireflective Effect of Wide-gap HeterojunctionEmitter for Crystalline Silicon Heterojunction SolarCell
E. O. Ateto1), Kazuki Shimizu1), Makoto Konagai1,2) andShinsuke Miyajima1)
1)Graduate School of Science and Engineering, TokyoTech, Japan, 2)PVREC, Tokyo Tech, Japan
1WePo.1.19 Device Simulations of Si/SiO2 Superlattice Solar Cells Using Bohm Quantum Potential Method
S. Yamada1), R. Ishikawa2), T. Higa3), M. Konagai1,3) andS. Miyajima3)
1)Japan Science and Technology Agency, Japan, 2)Faculty of Engineering, Niigata University, Japan,3)Department of Physical Electronics, Tokyo Institute of Technology, Japan
1WePo.1.23 Fabrication of Wire-structure Crystalline SiliconSolar Cells Using Doping Paste as a Doping Source
Y. Yashiki1), S. Hiza1), Y. Shirayanagi1), T. Hakamata1) and M. Konagai2)
1)Japan Science and Technology Agency, Japan,2)Tokyo Institute of technology, Japan
1WePo.1.29LN Optical Properties of Si Nano-Walls for Solar CellApplication
S. Yoshiba1), M. Hirai1), H. Tomizawa1), Y. Ichikawa1) and M. Konagai1,2)
1)Japan Science and Technology Agency, Japan,2)Tokyo Institute of Technology, Japan
4WePo.7.12 Numerical Analysis of N-type CrystallineSilicon Heterojunction Solar Cells with P-type Hydrogenated Nanocrystalline Cubic SiliconCarbide Emitter
D. Hamashita1), S. Miyajima1) and M. Konagai1,2)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)Photovoltaic Research Center(PVSEC), Tokyo Institute of Technology, Japan
4WePo.7.19 Fabrication of Rear-Emitter Heterojunction SolarCells with a-SiO:H Passivation Layer
K. Nakada1), J. Irikawa1), S. Miyajima1) and M. Konagai1,2)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)MEXT/FUTURE-PV InnovationResearch, JST, Japan
8WePo.8.11 Outdoor Characterization of InGaP and GaAs solarcells Using the Optical Wavelength Splitter
Y. Masuda1), Y. Takiguchi1), Y. Ueda2), A. Hosono3), S.Ishii3), Y. Ogawa3), T. Okamoto3) and M. Konagai1,4)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)Department of ElectricalEngineering, Tokyo University of Science, Japan, 3)Department of Electrical and Electronic Engineering,Kisarazu National College of Technology, Japan, 4)Photovoltaic Research Center (PVSEC), Tokyo Institutelof Technology, Japan
8WePo.9.11 Outdoor Measurements of Spectral-splittingPhotovoltaic System Using GaAs Solar Cell and GaInP Solar Cell
T. Okamoto1), A. Hosono1), S. Ishii1), Y. Ogawa1), Y.Masuda2), Y. Ueda3) and M. Konagai2,4)
1)Department of Electrical and Electronic Engineering,Kisarazu National College of Technology, 2)Departmentof Physical Electronics, Tokyo Institute of Technology, 3)Department of Electrical Engineering, Tokyo Universityof Science, 4)Photovoltaic Research Center (PVREC),Tokyo Institute of Technology, Japan
3MoO.3.4 Suppression of Recombination at a CdS/CIGSInterface by Inserting Cu(In,Ga)3Se5 for Cu(In,Ga)Se2 Solar Cells
T. Nishimura1), Y. Hirai1), Y. Kurokawa1) and A. Yamada1, 2)
1)Department of Physical Electronics, Tokyo Institute ofTechnology, Japan, 2)Photovoltaics Research Center(PVREC), Tokyo Institute of Technology, Japan
1TuPo.1.8 Optical Design for the Performance Improvementof Heterojunction Silicon Nanowire Solar Cells
Y. Kurokawa1,2), Y. Yamada1), M. Yano1) and A. Yamada1,3)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)PRESTO, Japan Science andTechnology Agency (JST), Japan, 3)PhotovoltaicsResearch Center (PVREC), Tokyo Institute of Technology, Japan
3TuPo.5.13 Characterization of Cu2ZnSn(S,Se)4 Solar Cells Annealed under Different Atmospheres
Y. Zhang1), N. Suyama2), M. Goto2), J. Kuwana2), K.Sugimoto2), T. Satake1), Y. Kurokawa2), M. Yin1) and A.Yamada2)
1)Technical Research Institute, Toppan Printing Co.,Ltd., Japan, 2)Department of Physical Electronics,Tokyo Institute of Technology, Japan
3WePo.6.15 Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Two-step Annealing
M. Goto1), J. Kuwana1), N. Suyama1), Y. Zhang2), Y.Kurokawa1) and A. Yamada1,3)
1)Department of Physical Electronics, Tokyo Instituteof Technology, Japan, 2)Technical Research Institute,Toppan Printing Co. Ltd., Japan, 3)PhotovoltaicsResearch Center, Tokyo Institute of Technology, Japan

WCPEC-5 (25th EUPVSEC/36th IEEE PVSC/PVSEC-20)

2010/09/06-10 Valencia, Spain

プロシーディング
ページ番号
発表題目、発表者・共同研究者、所属
2BO.4.3 S. Rattanapan, T. Watahiki, S. Miyajima, A. Yamada & M. Konagai
Tokyo Institute of Technology, Japan
High Efficiency P-SHJ Solar Cells with Hydrogenated Amorphous Silicon Oxide Front Intrinsic Buffer Layer
4BO.10.5 Y. Tsuno & Y. Hishikawa
AIST, Tsukuba, Japan
M. Kudo & H. Konishi
NTT Facilities, Tokyo, Japan
Y. Ueda & K. Kurokawa
Tokyo Institute of Technology, Japan
Evaluation of Different PV Modules in HOKUTO Mega-Solar Project
3CO.11.3 Y. Kurokawa, S. Yamada, S. Miyajima, A. Yamada & M. Konagai
Tokyo Institute of Technology, Japan
Introduction of Oxygen into the Barrier Layers in a Si Quantum Dots Superlattice Using a-SiC Matrix to Improve the Solar Cell Performance
3CO.12.5 A. Hongsingthong, L. Zhang, I.A. Yunaz, S. Miyajima & M. Konagai
Tokyo Institute of Technology, Japan
Multi-Layer ZnO Films with High Haze Ratio for Use as Front TCO in Si-Based Thin Film Solar Cells
4EP.1.5 Y. Ueda & K. Kurokawa
Tokyo Institute of Technology, Japan
Y. Tsuno
AIST, Ibaraki, Japan
M. Kudo & H. Konishi
NTT Facilities, Tokyo, Japan
Comparison between the I-V Measurement and the System Performance in Various Kinds of PV Technologie
3AV.1.9 D.Y. Kim, I.A. Yunaz, S. Miyajima & M. Konagai
Tokyo Institute of Technology, Japan
Narrow-Gap A-SiGeC:H Absorber Layers Fabricated by VHF-PECVD Using Monomethyl Germane
3AV.1.11 T. Krajangsang, I.A. Yunaz, S. Miyajima & M. Konagai
Tokyo Institute of Technology, Japan
Wide-Gap p-μc-Si1-xOx:H Films and their Application to Hetero-Junction Microcrystalline Silicon Solar Cells
6CV.5.14 K. Ogimoto & Y. Iwafune
University of Tokyo, Japan
T. Oozeki
Research Center for Photovoltaics of AIST, Tsukuba, Japan
Y. Ueda
Tokyo Institute of Technology, Japan
Power System Augmentation Planning with Large PV Penetration for Japan in 2030
3BV.2.109 T. Wada, J. Kubo & S. Yamazoe
Ryukoku University, Otsu, Japan
A. Yamada & M. Konagai
Tokyo Institute of Technology, Japan
Fabrication of High Density Cu(In,Ga)Se2 Films by a Combination of Printing and Sintering Processes
 1DV.3.16

S. Ray & S. Mukhopadhyay
Indian Association for the Cultivation of Science, Kolkata, India
Y. Kurokawa & M. Konagai
Tokyo Institute of Technology, Japan
Development of SiOx and SiOx/ SiO2 Superlattice for Application in Solar Cells